| Manufacturer |
Mitsubishi Electric |
| Series |
S-Series (High-Power Switching) |
| Device Type |
IGBT Module (Insulated, 2-Element / 2-in-1) |
| Collector-Emitter Voltage (VCES) |
1200 V |
| Gate-Emitter Voltage (VGES) |
±20 V |
| Continuous DC Collector Current (IC) |
900 A (TC=125°C) |
| Pulsed Collector Current (ICRM) |
1800 A (repetitive) |
| Power Dissipation (Ptot) |
6520 W (TC=25°C) |
| Collector-Emitter Saturation Voltage (VCE(sat)) |
1.55 V typ / 1.90 V max (IC=900A, VGE=15V, Tj=25°C); 1.75 V typ (Tj=125°C); 1.80 V typ (Tj=150°C) |
| Gate-Emitter Threshold Voltage (VGE(th)) |
5.4 V min / 6.0 V typ / 6.6 V max (IC=90mA, VCE=10V) |
| Input Capacitance (Cies) |
90 nF max (VCE=10V) |
| Gate Charge (QG) |
2300 nC typ (VCC=600V, IC=900A, VGE=15V) |
| Turn-On Delay Time (td(on)) |
900 ns max (VCC=600V, IC=900A, RG=0Ω, inductive load) |
| Rise Time (tr) |
250 ns max |
| Turn-Off Delay Time (td(off)) |
950 ns max |
| Fall Time (tf) |
350 ns max |
| Free-Wheel Diode Forward Voltage (VEC) |
1.65 V typ / 2.10 V max (IE=900A, Tj=25°C); 1.65 V typ (Tj=125°C) |
| Diode Reverse Recovery Time (trr) |
450 ns max (VCC=600V, IC=900A, RG=0Ω) |
| Diode Reverse Recovery Charge (Qrr) |
50 µC typ |
| Turn-On Switching Loss (Eon) |
68.9 mJ typ (VCC=600V, IC=900A, Tj=150°C, 1 pulse) |
| Turn-Off Switching Loss (Eoff) |
183 mJ typ (same conditions) |
| Internal Wiring Inductance |
0.286 mΩ typ (per element, TC=25°C) |
| Internal Gate Resistance (fg) |
2.2 Ω typ (per element) |
| Thermal Resistance Rth(j-c) — IGBT |
23 K/kW max (per element) |
| Thermal Resistance Rth(j-c) — FWD |
39 K/kW max (per element) |
| Isolation Voltage (Visol) |
2500 V AC (RMS, 60Hz, 1 min, all terminals to base plate) |
| Max Junction Temperature (Tjmax) |
175°C (instantaneous/overload) |
| Operating Junction Temperature (Tjop) |
-40°C to +150°C (continuous) |
| Storage Temperature (Tstg) |
-40°C to +125°C |
| Case Temperature (TCMax) |
125°C |
| Package |
Flat-base, copper base plate (plating-free), RoHS compliant, UL Recognized (UL1557, File E323585) |
| Applications |
Inverter devices; servo amplifiers; power supply units |